該RA13H1317M是13-watt RF的MOSFET放大器模塊for 12.5-volt，在135-經(jīng)營(yíng)移動(dòng)收音機(jī)175-MHz范圍.電池可以直接連接到漏極增強(qiáng)型MOSFET晶體管.如果沒有門電壓(VGG進(jìn)排水=0V),只是一個(gè)很小的泄漏電流與輸入信號(hào)衰減的RF高達(dá)60 dB.輸出功率作為柵極和漏極電壓增加電流增加.隨著gate voltage around 4V (minimum), output power and drain current大幅增加.額定輸出功率變?yōu)?/span>可在4.5V（典型值）和5V（最大）.在VGG=5V,典型柵極電流1 mA.該模塊是專為非線性調(diào)頻調(diào)制，但可能也可用于線性調(diào)制通過設(shè)置靜態(tài)漏電流隨柵極電壓和輸出功率控制輸入功率.
特征
•增強(qiáng)型MOSFET晶體管(IDD≅0@ VDD=12.5V, VGG=0V)
•Pout>13W,ηT>40% @ VDD=12.5V, VGG=5V, Pn=50mW
•寬帶頻率范圍：135-175 MHz
•低功耗控制電流IGG=1mA (typ)在VGG=5V
•模塊尺寸：66 x 21 x 9.88 mm
•線性操作有可能通過設(shè)置靜態(tài)漏電流同門電壓和輸出功率的控制輸入功率
RA13H1317M：Silicon RF Power Modules RoHS Compliance , 135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA13H1317M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range.The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially.The nominal output power becomes available at 4.5V (typical) and 5V(maximum). At VGG=5V, the typical gate current is 1 mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors(IDD?0 @ VDD=12.5V, VGG=0V)
• Pout>13W, ?T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 135-175 MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power RoHS COMPLIANCE
• RA13H1317M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER：RA13H1317M-101
SUPPLY FORM：Antistatic tray,10 modules/tray
深圳浩時(shí)健電子有限公司是國(guó)內(nèi)三菱射頻電子元器件專業(yè)供應(yīng)商，三菱射頻產(chǎn)品廣泛應(yīng)用用于移動(dòng)通信基站、直放站、衛(wèi)星通信、有線電視、雷達(dá)、無線本地環(huán)等領(lǐng)域。積極向國(guó)內(nèi)生產(chǎn)和科研單位推薦新產(chǎn)品：日本三菱公司生產(chǎn)的系列射頻功率放大模塊、系列射頻場(chǎng)效應(yīng)三極管。多年以來已為國(guó)內(nèi)眾多的生產(chǎn)廠家、科研院所、大專院校、國(guó)家重要單位維修部門的生產(chǎn)、維修、研制開發(fā)新品、教學(xué)實(shí)驗(yàn)等提供了準(zhǔn)確、快捷、方便的配套供貨服務(wù)。在經(jīng)營(yíng)運(yùn)作上,我公司批發(fā)、零售兼營(yíng)，可向用戶長(zhǎng)期保證貨源，并保證供貨品種的技術(shù)指標(biāo)滿足相關(guān)的國(guó)際檢測(cè)標(biāo)準(zhǔn)。
三菱（MITSUBISHI）:HF/VHF/UHF/900MHz（分立MOSFET管）
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三菱（MITSUBISHI）：（射頻功率放大模塊）
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